| 摘要 |
A cleaning method includes providing a stack including at least a layer of Ta2O5 and a layer of conductive material. The stack includes a conductive etch residue on at least portions thereof. A dilute aqueous composition is provided including hydrochloric acid (HCl), hydrogen peroxide (H2O2), and deionized water (H2O). The stack is exposed to the dilute aqueous composition to remove the conductive etch residue. The dilute aqueous composition may include a ratio of H2O:H2O2:HCl in a range of about 100:1:0.5 to about 100:10:5. A cleaning composition for use in the method includes a dilute aqueous composition including hydrochloric acid (HCl), hydrogen peroxide (H2O2), and deionized water (H2O).
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