发明名称 POWER SEMICONDUCTOR MODULE
摘要 PROBLEM TO BE SOLVED: To detect the main current of a power semiconductor module to a high frequency domain with high accuracy by significantly reducing the inductance of a current sensor section, which is provided in a main current circuit and formed by folding a conductor in a parallel plate-like shape, by detecting the main current from the potential difference in the sensor section. SOLUTION: A current sensor section 28 is formed by folding a conductor into a parallel plate-like shape. Namely, the sensor section 28 is composed of plates sections 28a and 28c and a bent section 28b connecting one ends of the plate sections 28a and 28b to each other. In addition, detecting terminals 34 and 35 are respectively formed at the other ends of the plate sections 28a and 28b. When the current passage of the sensor section 28 is folded in the parallel plate-like state in this way, the inductance between the detecting terminals 34 and 35 becomes smaller. Since the detected voltage varies depending upon the resistance between the terminals 34 and 35, an output that has a flat frequency characteristic and is proportional to the main current of a power semiconductor module is obtained between the terminals 34 and 35. Therefore, the module can be protected accurately with a prescribed current value.
申请公布号 JP2000353778(A) 申请公布日期 2000.12.19
申请号 JP20000059713 申请日期 2000.03.06
申请人 MITSUBISHI ELECTRIC CORP 发明人 MUTO HIROTAKA;KIKUNAGA TOSHIYUKI;OI TAKESHI;KINOUCHI SHINICHI;HORIGUCHI GOJI;USUI OSAMU;OKUDA TATSUYA
分类号 H01L25/07;G01R1/20;H01L23/58;H01L23/62;H01L23/64;H01L25/18 主分类号 H01L25/07
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