发明名称 MANUFACTURE OF SEMICONDUCTOR
摘要 <p>PROBLEM TO BE SOLVED: To satisfactorily deal with the problem of wafer edge by printing a first pattern in a wafer area where no edge effect is anticipated and printing an enlarged pattern in an area where more tendency of influence of the effect is anticipated. SOLUTION: A frame 31 of a reticle 30 is used for supporting a patterned mask which forms a main section 32 and two spare sections 34A and 34B. The main section 32 corresponds to a fully functional square area and prints a first pattern in an area which will not be influenced by any edge effect whatsoever. Also, it prints an enlarged pattern in non-functional edge area where likely influence of the effect is anticipated. In this way, the effect of nonuniformity can be improved and the problem of wafer edge can be dealt with satisfactorily.</p>
申请公布号 JP2000353660(A) 申请公布日期 2000.12.19
申请号 JP20000132555 申请日期 2000.05.01
申请人 INFINEON TECHNOL NORTH AMERICA CORP;INTERNATL BUSINESS MACH CORP <IBM> 发明人 SCHULZE STEFFEN;FRANZ ZACHA
分类号 G03F1/08;G03F7/20;G03F7/22;H01L21/027;H01L23/544;(IPC1-7):H01L21/027 主分类号 G03F1/08
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