| 摘要 |
PROBLEM TO BE SOLVED: To provide magnetically enhanced capacitively coupled planar plasma with radially uniform and high plasma density over a large area. SOLUTION: This plasma processing system is for depositing a film on a large-area substrate 17 by means of a CVD process in a reactor 10. The reactor 10 has a top plate 11, a bottom plate 12, and a cylindrical side wall 13. Furthermore, the plasma processing system comprises an upper high-frequency electrode 14, a lower high-frequency electrode 12, and a plurality of ring-magnets 26. The substrate 17 to be processed is loaded on a lower high-frequency electrode 12, and plasma is generated between the upper and lower high-frequency electrodes by the capacitive coupling of high-frequency power from both the high-frequency electrodes.
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