Method for forming a MOSFET with raised source and drain, saliciding, and removing upper portion of gate spacers if bridging occurs

摘要

A method to create raised landing pads for gate electrodes. A layer of polysilicon is deposited over the gate electrode after the gate spacers and the gate isolation areas have been formed. The gate electrode contains two layers, that is a bottom layer of poly and a top layer of oxide or SOG. A layer of photo resist is deposited over the polysilicon, a pattern of landing pads is created in the photo resist. The layer of polysilicon is etched in accordance with the pattern in the photo resist thus forming the elevated landing pads. Source and drain areas of the gate electrode can be contacted by metallic contacts that are in interconnects with these landing pads. The top layer of the gate electrode is removed making the gate electrode a recessed electrode. The invention thereby provides an easy method for removing (by CMP) any bridging that might occur (between the gate electrode and the landing pads) during salicidation.