Semiconductor device and method of fabricating semiconductor device

摘要

Provided are a semiconductor device which can prevent occurrence of inconvenience caused by overetching resulting from difference between depths of contact holes simultaneously formed in a memory cell part and a peripheral circuit part and inconvenience resulting from extreme increase of an aspect ratio of the contact holes, and a method of fabricating the same. An aluminum wire (22) provided on an interlayer insulating film (20) of a peripheral circuit part is electrically connected with semiconductor diffusion regions, i.e., N+-type source/drain regions (91, 92) (first semiconductor regions) and P+-type source/drain regions (81, 82) (second semiconductor regions) by a bit line contact hole (12) formed through the interlayer insulating film (11) to have a buried layer (25) therein and an aluminum wire contact hole (21B) formed through other interlayer insulating films (14, 20) to have a buried layer (27) therein.