MAGNETIC RANDOM ACCESS MEMORY AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To obtain an improved MRAM device, where a magnetic memory element is capable of avoiding thermal degradation and etching troubles while manufacturing a device manufacturing. SOLUTION: An MRAM device is equipped with a memory element and a circuit which controls the memory element. The circuit is equipped with a transistor 12a and a digit wire 29 and integrated on a board. The circuit is formed through a CMOS process, magnetic memory elements 43 and 44 are demarcated by converting a part 42b of a magnetic blanket layer into an insulating material. The magnetic blanket layer includes magnetic layers 40 and 42 and a nonmagnetic layer 41 sandwiched in between the magnetic layers 40 and 42 and is deposited on a conductive layer 34. Memory elements 43 and 44 are demarcated by an insulating or inactive part 42b and are separated from each other.