Double heterojunction light emitting device possessing a dopant gradient across the N-type layer

摘要

An active layer is sandwiched between the n-type cladding layer and the p-type cladding layer, forming a light emitting layer forming portion. The n-type cladding layer has a carrier concentration of non-doped or less than 5x1017 cm-3 on a side thereof close to the active layer, and a carrier concentration of 7x1017-7x1018 cm -3 on a side thereof remote from the active layer. With this structure, it is possible to suppress to a minimum the deterioration of crystallinity at an interface between the active layer and the n-type cladding layer as well as in the active layer. thereby providing a semiconductor light emitting device high in brightness.