发明名称 Memory with combined synchronous burst and bus efficient functionality
摘要 A memory device is described which is operable in both a synchronous mode and a bus efficient mode (BE). Address and data register circuitry provide multiple propagation paths which can be selected based upon the operating mode and function performed. These features allow one memory device to be manufactured for multiple commercial applications. The address and data register circuitry have first and second paths, wherein the second paths are longer than the first paths. Control circuitry is provided to select the desired paths. During a synchronous and BE read operations, the first path of both the address and data register circuitry is selected. During BE write operations, the second path of the address register circuitry is selected. If the BE is operating in non-pipelined mode, the second path of the data register circuitry is selected. Finally, if the BE is operating in pipelined mode, the first path of the data register circuitry is selected following a write operation, and the second path of the data register circuitry is selected following a read operation.
申请公布号 US6163500(A) 申请公布日期 2000.12.19
申请号 US19990389313 申请日期 1999.09.02
申请人 MICRON TECHNOLOGY, INC. 发明人 WILFORD, JOHN R.;GANS, DEAN
分类号 G11C7/10;G11C11/417;(IPC1-7):G11C8/00 主分类号 G11C7/10
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