Photolithography process with gas-phase pretreatment

摘要

The present invention discloses a photolithography process with a gas-phase pretreatment before the development of photoresist to increase the depth of focus (DOF) of an isolated-line pattern on a substrate. A photoresist layer is coated on a substrate by using spin-on technology. Then, an exposure process is performed on the photoresist layer through a reticle to transfer a pattern of the reticle to the photoresist layer. Additionally, a gas-phase pretreatment is performed on the photoresist layer before or after the exposure process to harden the surface of the photoresist layer. Finally, a developing process is performed to form a pattern on the substrate.