| 发明名称 |
Semiconductor device and method of forming semiconductor device |
| 摘要 |
A semiconductor device according to the present invention includes insulating branches which are formed as an interlayer insulating film on a semiconductor substrate. The interlayer insulating film has holes (voids) between the branches to thereby reduce electrostatic capacitance between stacked layers within a semiconductor device.
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| 申请公布号 |
US6162740(A) |
申请公布日期 |
2000.12.19 |
| 申请号 |
US19980114173 |
申请日期 |
1998.07.13 |
| 申请人 |
NEC CORPORATION |
发明人 |
MORINAGA, SHIROU |
| 分类号 |
H01L21/316;H01L21/768;H01L23/522;H01L23/532;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/316 |
| 代理机构 |
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