发明名称 |
Manufacturing method of light emitting device |
摘要 |
A method of manufacturing a light emitting device, including the steps of: forming an active layer composed of a compound semiconductor containing indium by a vapor phase growth method; and forming a cap layer composed of a compound semiconductor on said active layer by a vapor phase growth method at a growth temperature approximately equal to or lower than a growth temperature for said active layer.
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申请公布号 |
US6162656(A) |
申请公布日期 |
2000.12.19 |
申请号 |
US19990427694 |
申请日期 |
1999.10.27 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
KUNISATO, TATSUYA;KANO, TAKASHI;UEDA, YASUHIRO;MATSUSHITA, YASUHIKO;YAGI, KATSUMI |
分类号 |
H01L33/00;H01L33/06;H01L33/12;H01L33/32;H01L33/34;H01S5/00;H01S5/323;H01S5/343;(IPC1-7):H01L21/00 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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