发明名称 SENSE AMPLIFIER OF SEMICONDUCTOR MEMORY AND SEMICONDUCTOR MEMORY DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To guarantee stable and quick sense operation even if integrated density is increased and power source voltage is made low. SOLUTION: This sense amplifier comprises a reference voltage generator 200 generating reference voltage at a reference node, a sense voltage generator 100 connected to a reference node and generating sense voltage at a sense node in accordance with an ON or OFF state of a memory cell, and a level detector 300 connected to a sense node, detecting whether sense voltage is higher than a prescribed reverse voltage or not, and outputting a logic low or high signal indicating an ON or OFF state of a memory cell.</p>
申请公布号 JP2000353393(A) 申请公布日期 2000.12.19
申请号 JP20000099758 申请日期 2000.03.31
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 BOKU JUNHON
分类号 G11C11/419;G11C7/06;G11C7/14;G11C11/407;G11C16/06;(IPC1-7):G11C16/06 主分类号 G11C11/419
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