Method of fabricating flash memory

摘要

A flash memory. An oxide layer is on a substrate. A stacked gate is formed on the substrate. A tunnel diffusion region is formed in the substrate next to a first side of the stacked gate. The tunnel diffusion region extends to a portion of the substrate under the stacked gate. A doped region is formed in the substrate next to a second side of the stacked gate. The doped region is distant away from the stacked gate by a lateral distance. An inter-poly dielectric layer covers the tunnel diffusion region, the doped region, and the stacked gate. A polysilicon layer is on the inter-poly dielectric layer and extends perpendicular to the stacked gate.