| 发明名称 |
Static-random-access-memory cell |
| 摘要 |
A 4-T SRAM cell includes access transistors of a first type and cell (pull-up or pull-down) transistors of a second type. For example, the cell includes PMOS access transistors and NMOS pull-down transistors. The cell may also include leaky-junction or Schottky loads.
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| 申请公布号 |
US6163476(A) |
申请公布日期 |
2000.12.19 |
| 申请号 |
US19990382216 |
申请日期 |
1999.08.24 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
MARR, KEN;MANNING, H. MONTGOMERY |
| 分类号 |
G11C11/412;H01L27/11;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/412 |
| 代理机构 |
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