| 摘要 |
PROBLEM TO BE SOLVED: To efficiently form such a fine pattern as a pattern obtained by exposure with an electron beam by short-time processing. SOLUTION: When a mixed pattern consisting of a fine pattern 26 and a coarse pattern 23 is formed on a substrate 1, a positive type photosensitive material is applied on the substrate to form a 1st layer 21 having a substitutable coarse pattern 22 corresponding to a region in which the fine pattern is formed as well as the coarse pattern 23. A negative type photosensitive material is applied on the 1st layer and the surface of the region having the formed substitutable coarse pattern 22 is exposed with a charged particle beam through the fine pattern 26 to form a 2nd layer 25 having the fine pattern. Etching is then carried out using the 1st and 2nd layers as a mask. |
