| 摘要 |
PROBLEM TO BE SOLVED: To obtain an SOI wafer of high gettering capacity and its manufacture. SOLUTION: A semiconductor wafer is equipped with an oxide film 2 located over a silicon layer 3, where a porous silicon layer 4 is located above the oxide film 2 to function as a gettering layer. The porous silicon layer 4 is located above the oxide film 2, so that the silicon layer 4 is not prevented by the oxide film 2 from gettering impurities from the silicon layer 1. This structure can be manufactured through a laminating method. At this point, the oxide film 2 and the porous silicon layer 4 are not laminated directly, and a growth silicon layer 5 is interposed between them, by which the porous silicon layer 4 can be ensured of bonding strength to the oxide film 2. |
