| 摘要 |
PROBLEM TO BE SOLVED: To obtain formation method of a low-dielectric constant interlayer insulating film, and a semiconductor device which is manufactured using the method. SOLUTION: This method is for forming an interlayer insulating film, which has a process of forming aluminium films 104 on a body to be formed, a process of forming SiN films 105 on the films 104, a process where the above films 105 are selectively etched to form the patterns of the films 105, a process where the films 104 are etched using the films 105 as masks and the patterns of these films 104 are formed, a process where the side parts 104a of the above films 104 are selectively etched and the overhung parts 105a of the above films 105 are formed, and a process of forming an SiO2 film 106 over the entire surface.
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