| 摘要 |
PROBLEM TO BE SOLVED: To provide a photodetector which is capable of linearly converting an incident light power of high intensity into electrical signals through processing. SOLUTION: A semi-insulating InP base 22, an n+-type InP contact layer 24, an InGaAs absorption layer 26, and a p+-doped InGaAs layer 28 are laminated into a multilayered structure, a p-type metal contact dot 30 is attached to the p+-doped InGaAs layer 28, a mesa structure which contains the p+ doped InGaAs layer 28 and the non-doped InGaAs absorption layer 26 is etched, the n+-type InP contact layer 28 is subjected to patterning for attaching a passive metal dot 32, a patterned organic insulator layer 34 is attached and cured, and metal contact wiring conductors 36 and 38 are attached.
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