发明名称 Copper interconnection structure incorporating a metal seed layer
摘要 The present invention discloses an interconnection structure for providing electrical communication with an electronic device which includes a body that is formed substantially of copper and a seed layer of either a copper alloy or a metal that does not contain copper sandwiched between the copper conductor body and the electronic device for improving the electromigration resistance, the adhesion property and other surface properties of the interconnection structure. The present invention also discloses methods for forming an interconnection structure for providing electrical connections to an electronic device by first depositing a seed layer of copper alloy or other metal that does not contain copper on an electronic device, and then forming a copper conductor body on the seed layer intimately bonding to the layer such that electromigration resistance, adhesion and other surface properties of the interconnection structure are improved. <IMAGE>
申请公布号 SG77224(A1) 申请公布日期 2000.12.19
申请号 SG19990001210 申请日期 1999.03.22
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 EDELSTEIN DANIEL CHARLES;HARPER JAMES MCKELL EDWIN;KU CHAO-KUN;SIMONS, ANDREW, H.;UZOH CYPRIAN EMEKA
分类号 H01L23/52;H01L21/3205;H01L21/768;H01L23/532;(IPC1-7):H01L23/525 主分类号 H01L23/52
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