发明名称 |
Low voltage active body semiconductor device |
摘要 |
An active FET body device which comprises an active FET region including a gate, a body region and electrical connection between said gate and said body region that is located within the active FET region is provided along with various methods for fabricating the devices. The electrical connection extends over substantially the entire width of the FET. |
申请公布号 |
SG77263(A1) |
申请公布日期 |
2000.12.19 |
申请号 |
SG19990003754 |
申请日期 |
1999.08.03 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ASSADERAGHI FARIBORZ;MANDELMAN JACK ALLAN;HSU, LOUIS, L.;GAMBINO JEFFREY PETER;BERTIN CLAUDE LOUIS |
分类号 |
H01L27/108;H01L21/336;H01L21/8242;H01L21/84;H01L23/52;H01L27/12;H01L29/78;H01L29/786;(IPC1-7):H01L29/784 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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