| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain the subject abrasive containing particles having low sedimentation velocities and capable of maintaining the stability of a dispersion state even after long preservation. SOLUTION: This abrasive is obtained by dispersing cerium oxide having 0.1-0.35μm weight averaged particle diameter, preferably in the proportion of 0.1-20 wt.%, in water or an aqueous medium, containing a thickener, preferably one or more kinds selected from a water-soluble cellulose ether, a polyvinyl alcohol, a polyethylene glycol ether and the like, and regulating the viscosity so as to be 1.2-200 cP. The abrasive is usable for polishing of an insulation membrane or the like on a semiconductor substrate in the production step of a semiconductor device.</p> |
