| 摘要 |
PROBLEM TO BE SOLVED: To make the density of a plasma in a reaction chamber uniform, as well as the thickness of a film formed on a substrate to be uniform. SOLUTION: This plasma processing system is provided with an upper electrode 11, arranged on the upper side of a reaction chamber 2, a means 25 to impress a high-frequency electric power to the upper electrode 11, a shower board 10 for supplying a processing gas to the reaction chamber 2 arranged on the lower side of the upper electrode 11, a cylindrical electrode 3 surrounding the plasma producing region in the reaction chamber 2, a means 23 for impressing a high-frequency electric power to the cylindrical electrode 3, and ring magnets 6 and 7, which are arranged around the cylindrical electrode 3 and produce lines of magnetic force G1 along the inner circumferential surface of the cylindrical electrode 3, and a plurality of auxiliary ring magnets 30 are arranged concentrically on the upper side of a shower board 10.
|
