| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma device which can produce a plasma which is best suited to every plasma condition required for each of products and to uniformly etch a object to be processed. SOLUTION: This dry etching system is composed of a reaction vessel 2 for housing an object 3 to be processed, two or more high-frequency coils arranged concentrically to the object 3, high-frequency power supplies 17 and 18 for freely and independently applying a high-frequency electric power to the high-frequency coils, light receiving parts 10 and 11 arranged in the reaction container 2 corresponding to the high-frequency coils, and a control means 16 which controls the electric power and phase of the high-frequency power supply to be applied to the high-frequency coils, according to the intensity of the characteristic spectrum of the plasma in the reaction container that is measured by the light receiving parts 10 and 11 and which controls the quantity of etching the object by the plasma produced by the high-frequency coils. |
