| 摘要 |
PROBLEM TO BE SOLVED: To form a sufficient oxide layer, with a comparatively simplified process by injecting fluorine into a silicon lattice and thereafter forming a silicon oxide region through adoption of oxidizing process in the dry oxidizing process or wet oxidizing process. SOLUTION: A substrate 100 has a patterning layer 110, and the patterning layer 110 preferably forms, within the substrate 100, a region where a field oxide region 120 is formed with a photoresist mask. When fluorine indicated with the arrow mark 115 is injected to a substrate 100, fluorine atoms form a fluorine injection region 112 within the surface of the substrate 100. The preferable fluorine atom amount injected to the substrate 100 is about 1×1011 to 5×1016 atoms/cm2 and preferred energy injection amount is 1 keV to 1 MeV. After the patterning layer 110 is removed, the fluorine injecting region 112 of the substrate 100 is processed with the oxidizing processing to cause both the field oxide region 120 and a gate oxide layer 125 to grow.
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