发明名称 VAPOR-PHASE CONTENT REMOVING DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a vapor-phase content removing device, which when attached to a post stage of a CVD apparatus for forming a film on the surface of a semiconductor wafer, efficiently collects vapor-phase components of the process gas exhausted from the CVD apparatus. SOLUTION: A take-in vessel for introducing a mixed gas exhausted from a vertical CVD apparatus is provided, and collecting discs 40A and 40B where the vapor-phase component of the mixed gas is allowed to stick to the surface under cooling action with the mixed gas are provided in the capturing vessel. A plurality of collecting discs 40A and 40B are stacked in the laminating direction with intervals 52 and are arranged so that the mixed gas passes through the interval 52, which the gas inlet side end parts of the collecting discs 40A and 40B are arranged dislocated to the adjoining collecting disc. Thus, collected materials 56 growing at the gas inlet side end parts are prevented from interfering with each other.</p>
申请公布号 JP2000353668(A) 申请公布日期 2000.12.19
申请号 JP19990166934 申请日期 1999.06.14
申请人 SEIKO EPSON CORP 发明人 MORITAKE TOSHIMITSU
分类号 B01D53/34;C23C16/44;H01L21/205;(IPC1-7):H01L21/205 主分类号 B01D53/34
代理机构 代理人
主权项
地址