| 摘要 |
PROBLEM TO BE SOLVED: To contrive improvement in the accomplishment of low resistance and the insulation withstand voltage, etc., of a wiring consisting of scanning line containing a gate electrode in an active matrix type liquid crystal, indicating device provided with a thin-film transistor. SOLUTION: An Al alloy thin film (Al-Nd-Ti alloy thin film or Al-Nd alloy thin film) 22 is formed on a glass substrate 21 at a substrate temperature of 50 to 150 deg.C or thereabout, desirably 80 to 130 through a sputtering method. In this case, when the substrate temperature is 50 to 150 deg.C, desirably 80 to 130 deg.C, the formation of low resistance and the resistance withstand voltage of the wiring, consisting of an Al alloy thin film, can be improved.
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