| 摘要 |
PROBLEM TO BE SOLVED: To control conductivity of p-type nitride compound semiconductor layer while selecting a region by forming a dielectric film with an opening part in a partial region of a P-type semiconductor layer. SOLUTION: Since hydrogen taken in crystal from an opening part region alone of an SiO2 film mask 109 is emitted by a heat treatment process, an acceptor is activated in the opening part region along and a hole is generated. That is, since hydrogen remains in the part of a P-type GaN contact layer 108 covered with the SiO2 film 109 and a P-type Al0.1Ga0.9N clad layer 107, an acceptor is not activated when high resistance has been kept and a hole is not generated. A current constriction function can be built without executing a shape processing process by activating an acceptor selectively only in a region with a P-type nitride semiconductor layer in this way. |
