Memory with high integrity memory cells

摘要

A memory system for a digital computer includes a non-volatile random access memory for storing past and present values of state variables is immune from electromagnetic transients and other disturbances which can affect the integrity of the memory. Each memory cell is designed with an energy storage device and logic devices which control the logic sequence for charging of the energy storing devices. These memory cells are aligned in an array and specially designed system is included with this that takes into account the length of time required in order to charge each cell in the array.