| 摘要 |
PROBLEM TO BE SOLVED: To improve uniformity of a thin-film thickness making a carbon-substituted silane react with an oxidizing agent, comprising hydrogen peroxide in the presence of a reaction retardant and forming on a substrate a thin film having uniform thickness and smoothness of the surface thereof, while lowering carbon loss. SOLUTION: When a low permittivity carbon-containing silicon oxide dielectric material is formed by making a carbon-substituted silane react with an oxidizing agent, they are introduced to a reaction chamber in the presence of a reaction retardant for lowering a reaction sensitivity and changing pressure, temperature and flow rate. The minimum amount of the reaction retardant to be added to a substance to be reacted can delay reaction sufficiently to prevent a large-pressure spike suppressing the formation of a thin film having a uniform thickness. Furthermore, the amount is set appropriately so as to keep the carbon loss during reaction to be 10 at.% or lower and to flatten the surface of the thin film. The maximum amount of a reaction retardant used for reaction is made smaller than that which can prevent the reaction of a carbon-substituted silane reacted substance with an oxidizing agent comprising hydrogen peroxide and form a reaction product as a thin film.
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