发明名称 |
Doping of crystalline substrates |
摘要 |
A method is provided of producing a doped crystalline substrate having a crystal lattice. The method involves providing a crystalline substrate having a crystal lattice and implanting dopant atoms into the substrate to create a doped layer. Thereafter, or at the same time, ions are implanted into the substrate to create a damaged layer which is separate from the doped layer and contains vacancies and interstitials of the crystalline substrate. The interstitial atoms are caused to diffuse out of the damaged layer into vacancies in the doped layer to reduce the damage therein. |
申请公布号 |
AU4941900(A) |
申请公布日期 |
2000.12.18 |
申请号 |
AU20000049419 |
申请日期 |
2000.05.24 |
申请人 |
DE BEERS INDUSTRIAL DIAMONDS (PROPRIETARY) LIMITED |
发明人 |
JOHAN FRANS PRINS |
分类号 |
H01L21/265;C30B31/22;C30B33/00 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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