| 摘要 |
PURPOSE: A thin film transistor is provided to obviate a process of electrically activating a drain region and a source region what are doped with a high concentration impurity, to simplify the manufacturing process and to reduce the manufacturing cost. CONSTITUTION: The thin film transistor includes a substrate(101) on which a buffer layer(102) is covered. A channel layer(103a) has a channel region(I) on a channel of which is formed in a given region of the buffer layer. A source region(105b) and a drain region(105a) are overlapped with a portion of the both sides of the channel layer. A gate insulating film(107) is stacked on the source region, the drain region and the channel region. A gate electrode(108) is formed on the gate insulating film over the channel region.
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