| 摘要 |
PROBLEM TO BE SOLVED: To improve the strength of an on-chip electrode/electrode lead joint part for raised reliability by treating an Au bump/Al electrode joint part at high temperature so that, across the entire thickness direction, an Al film between an Au bump and Si substrate is converted to Au-Al compound over a specified percentage or above of a joint area. SOLUTION: An Al electrode 2 is formed on a circuit formation surface of a transistor chip 1 while a rear-surface electrode 3 whose top surface is Au is formed on the opposite surface. A chip electrode comprises an Al or Al alloy film, and the joint surface of a metal member comprises a noble metal plated film. The chip electrode and the metal member are jointed metallically with an Au bump in a thermal process, with an Al film in an Au/Al joint surface whose area is 80% or more being an Au Al alloy layer over the entire thickness direction. All Al under the joint part of a transistor package is allowed to be an alloy so that the strength of an Al electrode/Au bump/electrode lead joint part is improved, resulting in a structure under a compression stress, for higher reliability. |
