PATTERN FORMING MATERIAL AND PATTERN FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To suppress the generation of a low molecular weight compound from a resist film and to prevent the suspension of the compound in vacuum. SOLUTION: A resist film 11 comprising a resist material with a base resin comprising a cyclic ester-containing polymer and an acid generating agent is patternwise exposed with electron beams 12 in vacuum and heated. In the exposed part 11a of the resist film 11, the base resin is made alkali-soluble because the ring of the cyclic ester contained in the base resin is opened by the action of an acid generated from the acid generating agent. In this case, the base resin does not generate a low molecular weight decomposed product convertible to gas. The resist film 11 is then developed with an alkaline developing solution to obtain the objective resist pattern 13 comprising the unexposed part 11b of the resist film 11.