发明名称 |
ELECTRON EMITTING SOURCE AND MANUFACTURE THEREOF, AND DISPLAY DEVICE USING ELECTRON EMITTING SOURCE |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a low-voltage-driven electron emitting source having a small beam spread of an electron beam excellent efficiency a and long service life, little risk of short circuit between electrodes, and a high yield of manufacture. SOLUTION: This electron emitting source comprises cathode electrode lines 2 formed on a bottom substrate 1 and gate electrode lines 4 formed on cathode electrode lines 2 and on an exposed surface of the bottom substrate 1 with an insulating layer 3 intervened. A plurality of micropores 5 which penetrate from the gate electrode lines 4 to the cathode electrode lines 2 through the insulating layer 3 are formed. A bottom of each micropore 5 is formed as a recess 6 extended by a predetermined depth from an upper surface of the cathode electrode lines 2 in the thickness direction thereof and larger in aperture area than each micropore 5. An electron-emitting thin film 7 is formed on the bottom of the each recess 6.</p> |
申请公布号 |
JP2000348602(A) |
申请公布日期 |
2000.12.15 |
申请号 |
JP19990160044 |
申请日期 |
1999.06.07 |
申请人 |
SONY CORP |
发明人 |
NEGISHI EISUKE;NAKADA SATOSHI |
分类号 |
H01J9/02;H01J1/304;H01J29/04;H01J31/12;(IPC1-7):H01J1/304 |
主分类号 |
H01J9/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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