发明名称 ELECTRON EMITTING SOURCE AND MANUFACTURE THEREOF, AND DISPLAY DEVICE USING ELECTRON EMITTING SOURCE
摘要 <p>PROBLEM TO BE SOLVED: To provide a low-voltage-driven electron emitting source having a small beam spread of an electron beam excellent efficiency a and long service life, little risk of short circuit between electrodes, and a high yield of manufacture. SOLUTION: This electron emitting source comprises cathode electrode lines 2 formed on a bottom substrate 1 and gate electrode lines 4 formed on cathode electrode lines 2 and on an exposed surface of the bottom substrate 1 with an insulating layer 3 intervened. A plurality of micropores 5 which penetrate from the gate electrode lines 4 to the cathode electrode lines 2 through the insulating layer 3 are formed. A bottom of each micropore 5 is formed as a recess 6 extended by a predetermined depth from an upper surface of the cathode electrode lines 2 in the thickness direction thereof and larger in aperture area than each micropore 5. An electron-emitting thin film 7 is formed on the bottom of the each recess 6.</p>
申请公布号 JP2000348602(A) 申请公布日期 2000.12.15
申请号 JP19990160044 申请日期 1999.06.07
申请人 SONY CORP 发明人 NEGISHI EISUKE;NAKADA SATOSHI
分类号 H01J9/02;H01J1/304;H01J29/04;H01J31/12;(IPC1-7):H01J1/304 主分类号 H01J9/02
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