FABRICATING METHOD FOR TRANSISTOR OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a transistor of a semiconductor device is provided to improve a characteristic of a semiconductor device by changing a layout or omitting a high density dopant ion implantation process. CONSTITUTION: A field oxide layer(43), a gate oxide layer(45), and a gate electrode(47) are formed on a semiconductor substrate(41). An LDD(Lightly Doped Drain) region is formed by implanting low density dopant ions thereon. An insulating layer spacer(51) is formed at a sidewall of the gate electrode(47). A planarization insulating layer(53) is formed on the whole surface. A contact hole(55) for exposing the LDD region(49) is formed by performing an etching process using a contact mask.