| 摘要 |
The invention concerns a method consisting in: a) producing a first element (A) comprising a first silicon body (1a) whereof the main surface is coated, in succession, with a buffer layer (2a) of germanium or of an alloy of germanium and silicon and with a thin silicon film (3a); b) producing a second element (B), comprising a silicon body (1b) whereof a main surface is coated with a thin silicon oxide film (2b); c) linking the first element (A) with the second element (B) such that the thin silicon film (3a) of the first element (A) is in contact with the thin silicon oxide film (2b) of the second element (B); and d) eliminating the buffer layer (2a) to recuperate the silicon substrate comprising a buried thin silicon oxide film, and a reusable silicon substrate. The invention is useful for making microelectronic devices such as CMOS and MOSFET devices.
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