| 摘要 |
<p>PROBLEM TO BE SOLVED: To enable a semiconductor device to be improved in operating characteristics and reliability and lessened in power consumption, by a method wherein an offset region is formed between the channel forming region of an N-channel TFT of a pixel section and the LDD region of an N-channel TFT of a pixel section. SOLUTION: Channel forming regions 115 and 125, source or drain regions 121 to 123, and LDD(low concentration drain) regions 117 to 120 are provided to the active layer of an N-channel TFT(thin film transistor)149 of a pixel section. An offset region is provided between the LDD regions 117 to 120 and the channel forming regions 115 and 125, and the regions are provided so as not to overlap with a gate electrode by the offset region. Impurities which turn the LDD regions 117 to 120 into N-type are set at 1×1016 to 5×1018 atoms/cm3 in concentration, and the LDD regions 117 to 120 are 1/2 to 1/10 as high in impurity concentration as the LDD regions 111 and 112 of an N-channel TFT 148 of a drive circuit.</p> |
