发明名称 DOUBLE-LAYER STRUCTURE, SPIN VALVE SENSOR AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To enhance the thermal stability of a spin valve sensor by constituting it such that an oxide thin layer is provided between a ferromagnetic layer and an anti-ferromagnetic layer. SOLUTION: A spin valve sensor 300 has a pinning layer 302 formed of an anti-ferromagnetic material, and the layer 302 is constituted of the material selected from among the materials of a group consisting of the group VIII materials of the periodic table, a combination of the materials, a compound of the materials, and an alloy of the materials. An oxide thin film 303 is arranged on the anti-ferromagnetic layer 302 and a pin layer 304 formed of a magnetic material is provided on the thin layer 303. The layer 304 is constituted of the material selected from among the group of materials consisting of group VIII materials of the periodic table, combinations of the materials and their compounds, and the compounds of the materials. The layer 303 has a thickness 1 to 10 times thicker than the diameter of oxygen atoms. The formation of the layer 303 is performed at the pressure between a pressure of about 1.33×10-7 Pa (1×10-9 Torr) and about 1.33×10-6 Pa (1×10-8 Torr).
申请公布号 JP2000348935(A) 申请公布日期 2000.12.15
申请号 JP20000013578 申请日期 2000.01.21
申请人 READ RITE CORP 发明人 TSUUPEI SHII;MIN MAO;OUNWEN REN
分类号 G01R33/09;G11B5/39;H01F10/12;H01F10/14;H01F10/16;H01F10/26;H01F10/32;H01F41/32;H01L43/08;(IPC1-7):H01F10/14 主分类号 G01R33/09
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