发明名称 FERROELECTRIC SUBSTANCE MEMORY AND ACCESS METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a ferroelectric substance memory and its accessing method, by which an extremely small size of a cell can be realized and a stable access be ensured without destroying a data. SOLUTION: In a first operation mode, word lines WL11 and WL12 are selected independently, and in a second operation mode, they are selected at the same time, and one bit is stored in a pair of ferroelectric capacitors having commonly plate lines as an electrode. When the data is read out, all data that are stored in the respective capacitors of a cell string CST11 selected in the first operation mode are read out and rewritten successively and in a batch, all data that are stored in the respective capacitors of a second cell string CST12 are read out and rewritten successively and in a batch. In the second operation mode, all data that are stored in the respective capacitor pairs in the first and second strings are read out and rewritten successively and in a batch.
申请公布号 JP2000349248(A) 申请公布日期 2000.12.15
申请号 JP19990158632 申请日期 1999.06.04
申请人 SONY CORP 发明人 NISHIHARA TOSHIYUKI
分类号 G11C14/00;G11C11/22;H01L21/8246;H01L21/8247;H01L27/105;H01L29/788;H01L29/792;(IPC1-7):H01L27/10;H01L21/824;H01L27/108 主分类号 G11C14/00
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