| 摘要 |
PROBLEM TO BE SOLVED: To increase the area of a target which is used for the sputtering by a method wherein a plurality of oxide sinter blocks containing Mn as their main component are spread all over a backing plate and are bonded together. SOLUTION: A thermistor thin film is formed by sputtering while a heated substrate holder 1 is rotated in the mixed gas of argon with oxygen using a base substrate 2. The thermistor thin film formed on the substrate 2 is heat- treated and thereafter, a Pt thin film, which is used as an electrode, is formed on the entire surface of the thermistor thin film and after that, a resist pattern is formed and a comb-shaped pattern of the Pt electrode is formed by a dry etching. Here, a target 4 at the time when the thermistor thin film is formed by the sputtering constituted by preparing a plurality of oxide sintered body blocks containing Mn as their main component, spreading and those blocks closely all over a backing plate, and bonding them together.
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