| 摘要 |
PURPOSE: A method for manufacturing a metal-oxide-semiconductor transistor is provided to improve an integration density and a characteristic of the transistor, by preventing a short channel effect and thermal charges from being generated. CONSTITUTION: After an impurity region of an intermediate density is formed on a substrate(1), a trench is formed in a part of the impurity region and on the substrate under the impurity region. A source/drain isolation structure is formed by evaporating an insulating layer in the trench. After all the surface of the isolation structure and a part of the adjacent intermediate density source/drain are etched, a channel region(5) is formed by filling the etched region with monocrystal. Low and high density impurity regions are sequentially formed on the channel region and entire surface of the intermediate density source/drain, and a part of the high and low density impurity regions is etched to expose a part of the channel region and the intermediate density source/drain. Low and high density sources/drains are sequentially formed on the intermediate density source/drain. A gate oxidation layer(8) is formed on the etched side of the low and high density sources/drains, the exposed channel region and the intermediate density source/drain. A gate electrode is formed on the gate oxidation layer, having an upper surface in the same plane as the high density source/drain.
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