METHOD FOR MANUFACTURING AN INTERLAYER DIELECTRIC OF A SEMICONDUCTOR DEVICE USING A HIGH DENSITY PLASMA OXIDATION LAYER

摘要

PURPOSE: A method for manufacturing an interlayer dielectric of a semiconductor device using a high density plasma oxidation layer is provided to prevent a lower layer from being lifted up by reducing an ion bombardment effect regarding the lower layer in evaporating the high density plasma oxidation layer, and to increase an operating speed of the device by applying a metal gate to a high integrated device. CONSTITUTION: By applying the first bias power on the entire structure having a predetermined lower pattern is evaporated a high density plasma oxidation layer(14) for buffering stress in the lower pattern. A main high density plasma oxidation layer(15) is evaporated on the high density plasma oxidation layer for buffering the stress by applying the second bias power higher than the first bias power.