发明名称 APPARATUS FOR PERFORMING A RAPID THERMAL PROCESS
摘要 PURPOSE: An apparatus for performing a rapid thermal process(RTP) is provided to prevent pressure from being varied in a chamber and to prevent gas from flowing back into the chamber, by establishing separate mass flow controller(MFC) and a monitor in the first vent line. CONSTITUTION: An apparatus for performing a rapid thermal process(RTP) comprises a quartz tube(100), a sealing unit(102), an internal gas supply line, the first vent line(106), the first mass flow controller(MFC)(106a), the first monitor(106b), the second vent line(108), the second MFC(108a) and the second monitor(108b). The first quartz tube has a quadrilateral type, wherein a wafer is loaded/unloaded. The sealing unit is adhered to a former part of the quartz tube, having a frame type with an O-ring. The internal gas-supply line supplies gas into the quartz tube. The first vent line vents harmful gas in the quartz tube to the exterior, connected to a lower portion of the sealing unit. The first MFC varies the flow quantity of the first vent line according to the inputted gas flow induced into the quartz tube. The first monitor controls a gas flow quantity to be exhausted to the exterior based upon a setting value of the first MFC. The second vent line is used in sensing the quantity of O2 existing in a chamber. The second MFC constantly maintains the gas flow of the second vent line. The second monitor controls a gas flow quantity to be exhausted to the exterior based upon a setting value of the second MFC.
申请公布号 KR20000074514(A) 申请公布日期 2000.12.15
申请号 KR19990018514 申请日期 1999.05.21
申请人 SAMSUNG ELECTRONICS CO, LTD. 发明人 KIM, JIN JU;HA, TAE CHUL
分类号 H01L21/324;(IPC1-7):H01L21/324 主分类号 H01L21/324
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