| 摘要 |
PURPOSE: A lightly doped drain metal-oxide-silicon field effect transistor(LDD MOSFET) as a resistor is provided to manufacture a variable resistor having a linear characteristic without a modification or additional process, and to have the resistor occupy a relatively small area on a silicon substrate as compared with other resistors. CONSTITUTION: A lightly doped drain metal-oxide-silicon field effect transistor(LDD MOSFET) as a resistor comprises a semiconductor substrate(100), a gate oxidation layer(101), a gate electrode(102), a low density region of the first conductivity type(103) and a high density region of the first conductivity type(104). The gate oxidation layer is formed on the substrate. The gate electrode is formed on the gate oxidation layer. The low-density region is formed on the substrate adjacent to the gate electrode. The high-density region is formed in the substrate on both sides of the gate electrode.
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