| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a thin-film transistor, by which the performance and manufacturing yield of a thin-film transistor can be improved by wet-etching the upper layer parts of source and drain electrodes and collectively dry-etching the other layers. SOLUTION: After a titanium layer 6 and an aluminum layer 7 are formed into a two-layer structure for source and drain electrodes and the aluminum layer 7 is wet-etched, the parts of the titanium layer 6, a low-resistance layer 5, and channel layer 4 are collectively removed by dry etching. Since the number of layers to be dry-etched can be reduced, uniformity of etching is improved, and in particular, the low-resistance layer 5 can be maintained easily in a prescribed film thickness. Accordingly, the characteristics of a thin-film transistor can be improved. Since the aluminum layer 7 is wet-etched, additionally the occurrence of defective etching due to dust, which works as a mask can be prevented and the manufacturing yield of the thin film transistor, can be improved.
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