发明名称 SEMICONDUCTOR LASER AND ITS MANUFACTURE
摘要 PROBLEM TO BE SOLVED: To enable a semiconductor laser element to stably make high-output operations by suppressing the COD (optical damage) deterioration of the end face of a resonator. SOLUTION: On the end face of a resonator, an oxide film 15 is formed by evenly oxidizing a semiconductor material exposed on the end face. In the vicinity of the end face of the resonator, in addition, no-current injecting areas are provided in an active layer by oxidizing clad layers 3 and 5. The oxidation of the clad layers 3 and 5 is performed by exposing the resonator to high- temperature steam of 300-600 deg.C in temperature, etc., and so on.
申请公布号 JP2000349388(A) 申请公布日期 2000.12.15
申请号 JP19990154077 申请日期 1999.06.01
申请人 NEC CORP 发明人 ARAKIDA TAKAHIRO;SAWANO HIROYUKI;OSAWA YOICHI;HOTTA HITOSHI
分类号 H01S5/00;H01S5/028;(IPC1-7):H01S5/028 主分类号 H01S5/00
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