A FERROELECTRIC MEMORY DEVICE AND OPERATING METHOD THEREOF

摘要

PURPOSE: A ferroelectric memory device is provided to improve shortage of the life of a chip due to degradation of a reference cell within a reference voltage generator by removing the reference voltage generator and using a supply power voltage(VCC) as the reference voltage upon a read operation of data in the memory cell. CONSTITUTION: A ferroelectric memory device includes a memory cell(220) for storing data. A precharge unit(210) precharges BL and /BL. A sense amplifier(200) senses/amplifies the difference in a fine voltage of BL and /BL. A plate voltage generator(230) generates a plate voltage applied to the memory cell. The plate voltage generator(230) outputs a ground supply power voltage(Vss) when both the first pulse(pl1) and the second pulse(pl2) are at HIGH level in response to the first and second pulses(pl1, pl2). The plate voltage generator(230) outputs a high supply power voltage(Vpp) when both the first pulse(pl1) and the second pulse(pl2) are at LOW level. Also, the plate voltage generator(230) outputs a supply power voltage(Vcc) when the first pulse(pl1) is at HIGH level and the second pulse(pl2) is at LOW level.