A METHOD OF FABRICATING HIGH CAPACITANCE CAPACITOR AND THE STRUCTURE OF THAT

摘要

PURPOSE: A fabrication method and a structure of a high dielectric capacitor are provided to prevent a short between storage electrodes due to a lifting of an HSG(hemi-spherical grain) film by perpendicularly etching edge portions of the storage electrode. CONSTITUTION: After forming a pad electrode(104) on a substrate(100), an interlayer dielectric(106) is formed on the resultant structure. A storage node contact hole is formed by etching the interlayer dielectric(106). A storage node electrode(114) is formed by forming an amorphous silicon and etching the amorphous silicon. At this time, the amorphous silicon layer is anisotropically etched, so that edge portions(117) of the storage node electrode(114) is etched by perpendicular. Then, the edge portions(117) are recrystallized. An HSG film(118) having concave and convex structure is formed on the surface of the storage node electrode(114). The HSG film(118) is not formed on the edge portions(117) of the storage node electrode(114).