METHOD FOR MANUFACTURING AN INTERLAYER DIELECTRIC OF A SEMICONDUCTOR DEVICE USING MULTI-STEP EVAPORATION OF A HIGH DENSITY PLASMA OXIDATION LAYER

摘要

PURPOSE: A method for manufacturing an interlayer dielectric of a semiconductor device using multi-step evaporation of a high density plasma(HDP) oxidation layer is provided to prevent a lower pattern from being lifted up by high temperature and to guarantee a good filling characteristic without damage to the lower pattern, by evaporating a high density plasma(HDP) oxidation layer of a multi-step as an interlayer dielectric, the HDP oxidation layer being evaporated at low temperature. CONSTITUTION: The first high density plasma(HDP) oxidation layer is evaporated at the first etching evaporation rate(£total evaporation quantity minus real evaporation quantity| divided by total evaporation quantity) on a substrate(20) having a predetermined lower pattern. The second HDP oxidation layer is evaporated on the first HDP oxidation layer at the second etching evaporation rate higher than the first etching evaporation rate. The third HDP oxidation layer(22c) is evaporated on the second HDP oxidation layer at the third etching evaporation rate lower than the second etching evaporation rate.